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PXAC241002FC-V1-R2 数据表(PDF) 4 Page - Cree, Inc

部件名 PXAC241002FC-V1-R2
功能描述  Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz
PDF  8 Pages
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制造商  CREE [Cree, Inc]
网页  http://www.cree.com/
标志 CREE - Cree, Inc

PXAC241002FC-V1-R2 数据表(HTML) 4 Page - Cree, Inc

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PXAC241002FC
Rev. 02, 2018-10-04
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
4
Typical RF Performance (cont.)
Load Pull Performance, Doherty Configuration
Main Side – Pulsed CW` signal: 160 µs, 10% duty cycle, VDD = 28 V, IDQ = 240 mA, class AB
P1dB
Max Output Power
Max Drain Efficiency
Freq
[MHz]
Zs
[
]
Zl
[
]
Gain
[dB]
P1dB
[dBm]
P1dB
[W]
D
[%]
Zl
[
]
Gain
[dB]
P1dB
[dBm]
P1dB
[W]
D
[%]
2300
12.95 – j25.61
7.27 – j9.24
18.7
46.81
48
54.9
10.89 – j3.58
20.6
45.4
34
63.7
2350
19.55 – j24.45
7.18 – j9.73
18.3
46.76
47
53.3
10.64 – j3.34
20.5
45.2
33
63.3
2400
24.79 – j25.22
7.26 – j9.51
18.6
46.70
47
54.1
9.41 – j2.55
20.7
44.9
31
63.1
Peak Side – Pulsed CW signal: 160 µs, 10% duty cycle, VDD = 28 V, VDGS(peak) = 1,400 mA, class C
P1dB
Max Output Power
Max Drain Efficiency
Freq
[MHz]
Zs
[
]
Zl
[
]
Gain
[dB]
P1dB
[dBm]
P3dB
[W]
D
[%]
Zl
[
]
Gain
[dB]
P1dB
[dBm]
P3dB
[W]
D
[%]
2300
8.50 – j15.45
3.77 – j6.16
14.5
48.67
74
59.2
7.27 – j0.08
15.6
45.8
38
68.9
2350
12.98 – j14.49
3.53 – j6.59
14.0
48.58
72
56
6.05 – j0.44
15.2
46.0
40
68.3
2400
16.77 – j15.19
3.73 – j6.81
14.0
48.40
69
54.5
5.26 – j1.22
15.5
46.5
44
69.3
0
10
20
30
40
50
60
70
13
14
15
16
17
18
19
20
29
33
37
41
45
49
53
Output Power (dBm)
CW Performance at selected V
DD
I
DQ(main) = 230 mA, VGS(peak) = 1.5 V
ƒ = 2400 MHz
24 V Gain
28 V Gain
32 V Gain
24 V Eff
28 V Eff
32 V Eff
c241002fc-gr6
-26
-24
-22
-20
-18
-16
-14
-12
-10
2
4
6
8
10
12
14
16
18
2150
2250
2350
2450
2550
Frequency (MHz)
CW Performance Small Signal
V
DD = 28 V, IDQ(main) = 230 mA,
V
GS(peak) = 1.5V
Gain
IRL
c241002fc-gr7



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