STP4N150 datasheet(2/11 Pages) STMICROELECTRONICS

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STP4N150 - STW4N150

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

Table 4: Thermal Data

Table 5: Avalanche Characteristics

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 6: On /Off

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

1500

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

1500

VGS

Gate- source Voltage

± 30

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

2.5

IDM ( )

Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

160

Derating Factor

W/°C

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

TO-220

TO-247

Rthj-case

Thermal Resistance Junction-case Max

0.78

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

350

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 1 mA, VGS = 0

1500

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating,TC = 125°C

500

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 30 V

± 100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V, ID = 2 A

Ω

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