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LM760 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 LM760
功能描述  High Speed Differential Comparator
PDF  10 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LM760 数据表(HTML) 2 Page - National Semiconductor (TI)

  LM760 Datasheet HTML 1Page - National Semiconductor (TI) LM760 Datasheet HTML 2Page - National Semiconductor (TI) LM760 Datasheet HTML 3Page - National Semiconductor (TI) LM760 Datasheet HTML 4Page - National Semiconductor (TI) LM760 Datasheet HTML 5Page - National Semiconductor (TI) LM760 Datasheet HTML 6Page - National Semiconductor (TI) LM760 Datasheet HTML 7Page - National Semiconductor (TI) LM760 Datasheet HTML 8Page - National Semiconductor (TI) LM760 Datasheet HTML 9Page - National Semiconductor (TI) Next Button
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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Storage Temperature Range
Metal Can and Ceramic DIP
b
65 Cto a175 C
Molded DIP
b
65 Cto a150 C
Operating Temperature Range
Military (LM760)
b
55 Cto a125 C
Commercial (LM760C)
0 Cto a70 C
Lead Temperature
Metal Can and Ceramic DIP
(Soldering 60 sec)
300 C
Molded DIP (Soldering 10 sec)
265 C
Positive Supply Voltage
a
80V
Negative Supply Voltage
b
80V
Peak Output Current
10 mA
Differential Input Voltage
g
50V
Input Voltage
Va t VI t Vb
ESD Susceptibility
TBD
LM760
Electrical Characteristics
VCC e g45V to g65V TA eb55 Cto a125 C TA e 25 C for typical figures unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VIO
Input Offset Voltage
RS s 200X
10
60
mV
IIO
Input Offset Current
05
75
m
A
IIB
Input Bias Current
80
60
m
A
RO
Output Resistance (Either Output)
VO e VOH
100
X
tPD
Response Time
TA e 25 C (Note 3)
18
30
TA e 25 C (Note 4)
25
ns
(Note 5)
16
D
tPD
Response Time Difference
between Outputs (Note 1)
(tPD of aVI1) b (tPD of bVI2)TA e 25 C
50
(tPD of aVI2) b (tPD of bVI1)TA e 25 C
50
ns
(tPD of aVI1) b (tPD of aVI2)TA e 25 C
75
(tPD of bVI1) b (tPD of bVI2)TA e 25 C
75
RI
Input Resistance
f e 10 MHz
12
kX
CI
Input Capacitance
f e 10 MHz
80
pF
D
VIO DT
Average Temperature Coefficient
RS e 50X
30
m
V C
of Input Offset Voltage
TA eb55 Cto a125 C
D
IIO DT
Average Temperature Coefficient
TA ea25 Cto a125 C
20
nA C
of Input Offset Current
TA ea25 Cto b55 C
70
VIR
Input Voltage Range
VCC e g65V
g
40
g
45
V
VIDR
Differential Input Voltage Range
g
50
V
VOH
Output Voltage HIGH
0 mA s IOH s 50 mA
24
32
(Either Output)
VCC ea50V
V
IOH e 80 mA VCC e g45V
24
30
VOL
Output Voltage LOW
IOL e 32 mA
025
04
V
(Either Output)
Ia
Positive Supply Current
VCC e g65V
18
32
mA
Ib
Negative Supply Current
VCC e g65V
90
16
mA
2



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