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LM760 数据表(PDF) 3 Page - National Semiconductor (TI) |
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LM760 数据表(HTML) 3 Page - National Semiconductor (TI) |
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3 / 10 page ![]() LM760C Electrical Characteristics VCC e g45V to g65V TA e 0 Cto a70 C TA e 25 C for typical figures unless otherwise specified Symbol Parameter Conditions Min Typ Max Units VIO Input Offset Voltage RS s 200X 10 60 mV IIO Input Offset Current 05 75 m A IIB Input Bias Current 80 60 m A RO Output Resistance (Either Output) VO e VOH 100 X tPD Response Time TA e 25 C (Note 3) 18 30 TA e 25 C (Note 4) 25 ns (Note 5) 16 D tPD Response Time Difference between Outputs (Note 1) (tPD of aVI1) b (tPD of bVI2)TA e 25 C 50 (tPD of aVI2) b (tPD of bVI1)TA e 25 C 50 ns (tPD of aVI1) b (tPD of aVI2)TA e 25 C10 (tPD of bVI1) b (tPD of bVI2)TA e 25 C10 RI Input Resistance f e 10 MHz 12 kX CI Input Capacitance f e 10 MHz 80 pF D VIO DT Average Temperature Coefficient RS e 50X 30 m V C of Input Offset Voltage TA e 0 Cto a70 C D IIO DT Average Temperature Coefficient TA ea25 Cto a70 C 50 nA C of Input Offset Current TA ea25 Cto0 C10 VIR Input Voltage Range VCC e g65V g 40 g 45 V VIDR Differential Input Voltage Range g 50 V VOH Output Voltage HIGH 0 mA s IOH s 50 mA 24 32 (Either Output) VCC ea50V V IOH e 80 mA VCC e g45V 25 30 VOL Output Voltage LOW IOL e 32 mA 025 04 V (Either Output) Ia Positive Supply Current VCC e g65V 18 34 mA Ib Negative Supply Current VCC e g65V 90 16 mA Note 1 TJ Max e 150 C Note 2 Ratings apply to ambient temperature at 25 C Note 3 Response time measured from the 50% point of a 30 mVP–P 10 MHz sinusoidal input to the 50% point of the output Note 4 Response time measured from the 50% point of a 20 VP–P 10 MHz sinusoidal input to the 50% point of the output Note 5 Response time measured from the start of a 100 mV input step with 50 mV overdrive to the time when the output crosses the logic threshold 3 |
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