IRFE310, JANTX-, JANTXV-, 2N6786U Devices

2

www.irf.com

Parameter

Min

Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

400

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.37

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

3.6

VGS = 10V, ID = 0.8A

Resistance

—

—

3.7

VGS = 10V, ID = 1.25A

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

0.87

—

—

S ( )VDS > 15V, IDS = 0.8A „

IDSS

Zero Gate Voltage Drain Current

—

—

25

VDS= 0.8 x Max Rating,VGS=0V

—

—

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

8.4

VGS = 10V, ID = 1.25A

Qgs

Gate-to-Source Charge

—

—

1.6

nC

VDS = Max Rating x 0.5

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

5.0

Turn-On Delay Time

—

—

15

VDD = 15V, ID = 1.25A,

tr

Rise Time

—

—

20

RG = 7.5Ω

Turn-Off Delay Time

—

—

35

tf

Fall Time

—

—

30

LD

Internal Drain Inductance

—

5.0

—

LS

Internal Source Inductance

—

15

—

Ciss

Input Capacitance

—

190

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

65

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

24

—

nA

„

nH

ns

µA

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

8.3

RthJ-PCB

Junction-to-PC board

—

—

27

soldered to a copper-clad PC board

°C/W

Measured from drain

lead, 6mm (0.25 in)

from package to center

of die.

Measured from source

lead, 6mm (0.25 in)

from package to

source bonding pad.

Modified MOSFET sym-

bol showing the internal

inductances.

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

1.25

ISM

Pulse Source Current (Body Diode)



—

—

5.5

VSD

Diode Forward Voltage

—

—

1.4

V

trr

Reverse Recovery Time

—

—

540

ns

Tj = 25°C, IF = 1.25A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

4.5

µCVDD ≤ 50V „

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Modified MOSFET symbol

showing the integral reverse

p-n junction rectifier.