10/9/98

www.irf.com

1

Absolute Maximum Ratings

Parameter

IRFE310, JANTX-, JANTXV-, 2N6786U

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

1.25

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

0.80

IDM

Pulsed Drain Current



5.5

PD @ TC = 25°C

Max. Power Dissipation

15

W

Linear Derating Factor

0.12

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

‚

34

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

2.8

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Surface Temperature

300 ( for 5 seconds)

Weight

0.42 (typical)

g

N-CHANNEL

PD - 91782

400Volt, 3.6

Ω

Ω

Ω

Ω

Ω, HEXFET

The leadless chip carrier (LCC) package represents

the logical next step in the continual evolution of

surface mount technology.

The LCC provides

designers the extra flexibility they need to increase

circuit board density. International Rectifier has

engineered the LCC package to meet the specific

needs of the power market by increasing the size of

the bottom source pad, thereby enhancing the thermal

and electrical performance. The lid of the package

is grounded to the source to reduce RF interference.

HEXFET transistors also feature all of the well-es-

tablished advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling

and electrical parameter temperature stability. They

are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers,

audio amplifiers and high-energy pulse circuits,

and virtually any application where high reliability

is required.

A

IRFE310

REPETITIVE AVALANCHE AND dv/dt RATED

JANTX2N6786U

JANTXV2N6786U

[REF:MIL-PRF-19500/556]

Product Summary

Part Number

IRFE310

400V

3.6

Ω

1.25A

Features: