AP6502 datasheet(4/14 Pages) DIODES

4 / 14 page

AP6502

Document Number: DS35423 Rev. 10 - 2

4 of 14

www.diodes.com

May 2017

AP6502

Electrical Characteristics (VIN = 12V, @TA = +25°C, unless otherwise specified.)

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

IIN

Shutdown Supply Current

VEN = 0V

0.3

3.0

µA

IIN

Supply Current (Quiescent)

VEN = 2.0V, VFB = 1.0V

0.6

1.5

RDS(ON)1

High-Side Switch On-Resistance (Note 8)

130

mΩ

RDS(ON)2

Low-Side Switch On-Resistance (Note 8)

130

mΩ

ILIMIT

HS Current Limit

Minimum duty cycle,

VOUT=3.3V

4.4

ILIMIT

LS Current Limit

From Drain to Source,

VOUT=3.3V

0.9

High-Side Switch Leakage Current

VEN = 0V, VSW = 0V,

VSW = 12V

μA

AVEA

Error Amplifier Voltage Gain

(Note 8)

800

V/V

GEA

Error Amplifier Transconductance

ΔIC = ±10µA

1000

µA/V

GCS

COMP to Current Sense

Transconductance

2.8

A/V

FSW

Oscillator Frequency

VFB = 0.75V

300

340

380

kHz

FFB

Fold-back Frequency

VFB = 0V

0.30

fSW

DMAX

Maximum Duty Cycle

VFB = 800mV

tON

Minimum On Time

130

VFB

Feedback Voltage

TA = -40°C to +85°C

900

925

950

Feedback Overvoltage Threshold

1.1

VEN_RISING

EN Rising Threshold

0.7

0.8

0.9

EN Lockout Threshold Voltage

2.2

2.5

2.7

EN Lockout Hysteresis

220

INUVVTH

VIN Under Voltage Threshold Rising

3.80

4.05

4.40

INUVHYS

VIN Under Voltage Threshold Hysteresis

250

Soft-Start Current

VSS = 0V

μA

Soft-Start Period

CSS = 0.1µF

tSD

Thermal Shutdown (Note 8)

+160

°C

Note:

8. Guaranteed by design.

AP6502 数据表(PDF) 4 Page - Diodes Incorporated

AP6502 数据表(HTML) 4 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

数据表下载