CLC111 datasheet(3/10 Pages) NSC

3 / 10 page

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales

Office/Distributors for availability and specifications.

Supply Voltage (V

CC)

±7.0V

OUT

Output is short circuit protected to

ground, but maximum reliability will

be maintained if I

OUT does not

exceed...

80mA

Input Voltage

±V

Maximum Junction Temperature

Range

+150˚C

Operating Temperature Range

40˚C to +85˚C

Storage Temperature Range

−65˚C to +150˚C

Lead Solder Duration (+300˚C)

10 sec

ESD rating

1000V

Operating Ratings

Thermal Resistance

Package

(

JC)(θJA)

MDIP

70˚C/W

125˚C/W

SOIC

65˚C/W

145˚C/W

Electrical Characteristics

±V

CC = ±5V, RL = 100Ω; unless specified

Symbol

Parameter

Conditions

Typ

Min/Max Ratings (Note 2)

Units

Ambient Temperature

CLC111AJ

+25˚C

−40˚C

+25˚C

+85˚C

Frequency Domain Response

SSBW

Small Signal Bandwidth

OUT < 0.5VPP

800

400

300

MHz

LSBW

Small Signal Bandwidth

OUT < 4.0VPP

450

250

200

MHz

Gain Flatness

OUT < 0.5VPP

GFL

Flatness

DC-50MHz

0.02

±0.1

±0.2

GFPH

Peaking

DC-200MHz

0.1

1.0

0.5

GFRH

Rolloff

DC-200MHz

0.1

0.8

1.2

Differential Gain

L = 150Ω,

4.43MHz,

0.15

0.4

0.25

Differential Phase

L = 150Ω,

4.43MHz

0.04

0.08

deg

Time Domain Response

TRS

Rise and Fall Time

0.5V step

0.6

0.8

1.1

TRL

4.0V step

1.0

1.4

1.7

Settling Time to ±0.1%

2.0V Step

OS1

Overshoot

4V Step

Slew Rate

4V Step

3500

2700

2300

V/µsec

Distortion And Noise Performance

HD2

2nd Harmonic Distortion

PP, 20MHz

−62

−47

−50

dBc

HD3

3rd Harmonic Distortion

PP, 20MHz

−62

−55

−52

dBc

Equivalent Output Noise

Voltage

>1MHz

4.0

4.8

5.3

nV/

ICN

Current

>1MHz

1.6

4.0

3.0

pA/

Static, DC Performance

GA1

Small Signal Gain

No Load

0.996

0.994

0.992

V/V

GA2

Small Signal Gain

100

Ω Load

.98

.96

.97

V/V

Output Resistance

1.4

3.0

2.0

Ω

VIO

Output Offset Voltage (Note 3)

DVIO

Average Temperature

Coefficient

±30

±100

±50

µV/˚C

IBN

Input Bias Current (Note 3)

µA

DIBN

Average Temperature

Coefficient

±187

±100

nA/˚C

PSRR

Power Supply Rejection Ratio

−52

−48

−46

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