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CLC111 数据表(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 CLC111
功能描述  Ultra High Slew Rate, Closed Loop Buffer
PDF  10 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

CLC111 数据表(HTML) 4 Page - National Semiconductor (TI)

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Electrical Characteristics (Continued)
±V
CC = ±5V, RL = 100Ω; unless specified
Symbol
Parameter
Conditions
Typ
Min/Max Ratings (Note 2)
Units
Static, DC Performance
ICC
Supply Current (Note 3)
No Load
10.5
12
12
12
mA
Miscellaneous Performance
ILIN
Integral Endpoint Linearity
±2V, Full Scale
0.2
1.0
0.5
0.5
%
RIN
Input Resistance
1
0.3
0.7
1
M
CIN
Input Capacitance
CERDIP
2.5
3.5
3.5
3.5
pF
CIN
Input Capacitance
Plastic DIP
1.25
2.0
2.0
2.0
pF
VO
Output Voltage Range
No Load
3.9
3.5
3.6
3.6
V
VOL
Output Voltage Range
R
L = 100Ω
3.5
+3.1,−2.5
3.2
3.2
V
VOL
Output Voltage Range
R
L = 100Ω, 0˚C
±3.1
V
IO
Output Current
60
50,25
50
40
mA
IO
Output Current
0˚-70˚C
50,35
50
50
mA
Electrical Characteristics
V
CC =+3V or VCC =+5V, −VEE =0V, TA=+25˚C, RL =100Ω; unless specified
Symbol
Parameter
Conditions
V
CC =
3V
V
CC =
5V
Units
Frequency Domain Response
SSBW
−3dB Bandwidth
V
OUT < 0.5VPP
120
300
MHz
LSBW
−3dB Bandwidth
V
OUT < 2.0VPP
210
MHz
Gain Flatness
V
OUT < 0.5VPP
GFL
Flatness
DC-30MHz
0.5
0.1
dB
GFPH
Peaking
DC-200MHz
0
0
dB
GFRH
Rolloff
DC-60MHz
1.5
0.25
dB
Time Domain Response
TRS
Rise and Fall Time
0.5V step
3.9
1.2
ns
TRL
Rise and Fall Time
2.0V step
1.5
ns
OS1
Overshoot
1.0V step
3
3
%
SR
Slew Rate
0.5V step
260
425
V/µsec
Distortion And Noise Performance
HD2
2nd Harmonic Distortion
0.5V
PP, 20MHz
−46
dBc
1.0V
PP, 20MHz
−55
HD3
3rd Harmonic Distortion
0.5V
PP, 20MHz
−44
dBc
1.0V
PP, 20MHz
−64
Static, DC Performance
GA1
Small Signal Gain
AC coupled
0.96
0.97
V/V
R
L =
2.0
4.5
mA
Miscellaneous Performance
VO
Output Voltage Range
R
L =
1.5
3.4
V
PP
VOL
Output Voltage Range
R
L = 100Ω
1.1
2.6
V
PP
www.national.com
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