STP16NK65Z - STB16NK65Z-S

2/12

Table 3: Absolute Maximum ratings

(*) Pulse width limited by safe operating area

Table 4: Thermal Data

Table 5: Avalanche Characteristics

Table 6: Gate-Source Zener Diode

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied fromgate to source. In this respect the Zener voltage ia appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Value

Unit

650

V

650

V

Gate- source Voltage

± 30

V

13

A

8.19

A

Drain Current (pulsed)

52

A

190

W

Derating Factor

1.51

W/°C

Gate source EDS (HBM-C=100pF, R=1.5k

Ω)

6000

V

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ns

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

Rthj-case

Thermal Resistance Junction-case Max

0.66

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max. Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

13

A

Single Pulse Avalanche Energy

350

mJ

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

30

V