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STP16NK65Z 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP16NK65Z
功能描述  N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP16NK65Z 数据表(HTML) 3 Page - STMicroelectronics

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STP16NK65Z - STB16NK65Z-S
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
(2) Pulse width limited by safe operating area
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
650
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 100 µA
33.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 6.5 A
0.38
0.50
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V, ID = 6.5 A
12
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
2750
275
60
pF
pF
pF
Coss eq. (*)
Equivalent Output
Capacitance
VGS = 0V, VDS = 6.5 V to 520 V
188
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 325 V, ID = 6.5 A
RG = 4.7Ω VGS = 10 V
(see Figure 17)
25
25
68
17
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 520 V, ID = 13 A,
VGS = 10 V
(see Figure 20)
89
18
45
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
13
52
A
A
VSD (1)
Forward On Voltage
ISD = 13 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 13 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 25°C
(see Figure 18)
500
5.2
21
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 13 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150°C
(see Figure 18)
615
7
22.5
ns
µC
A



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