16T06AFSW datasheet(5/7 Pages) NELLSEMI

5 / 7 page

100

200

0.5

1.5

1.0

100

SEMICONDUCTOR

16T Series RoHS

RoHS

(A)

TSM

2.0

2.5

3.0

3.5

4.0

4.5

5.0

120

140

160

180

100

1000

Fig.5 On-state characteristics (maximum values)

Fig.6 surge peak on- state current versus

of cycles

number

3000

100

1000

0.0

0.01

0.10

1.00

10.00

0.5

1.0

1.5

2.0

2.5

1.0

0.1

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

l²t

(A), I²t(A²S)

TSM

-40

-20

100

120

140

10.0

100.0

100

125

IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25°C]

Fig7. Non-repetitive surge peak on-state

current for a sinusoidal

Fig.8 Relative variation of gate trigger current

Fig.9 Relative variation of critical rate of

decrease of main current versus

(dV/dt)c (typical values)

Fig.10 Relative variation of critical rate of

decrease of main current versus

(dV/dt)c (typical values)

(dI/dt)c [T ] (dl/dt)c [

T specified ]

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

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Page 5 of 7

(A)

T max.

= 0.85 V

R = 25 mΩ

T =T max

T =25°C

(V)

One cycle

t=20ms

Repetitive

Tc=85°C

Number of cycles

Non repetitive

T initial=25°C

pulse with width tp<10ms and

corresponding value of l²t

ITSM

dI/dt limitation:

50A/µs

T initial=25°C

T (°C)

I & I

IGT

(dV/dt)c (V/µs)

CW/BW

snubberless and Logic level types

standard types

T (°C)

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