STM32F030C6 datasheet(57/93 Pages) STMICROELECTRONICS

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DS9773 Rev 4

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STM32F030x4/x6/x8/xC

Electrical characteristics

6.3.9

PLL characteristics

The parameters given in Table 38 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 21: General operating

conditions.

6.3.10

Memory characteristics

Flash memory

The characteristics are given at TA = -40 to 85 °C unless otherwise specified.

tsu(LSI)(2)

LSI oscillator startup time

µs

IDDA(LSI)(2) LSI oscillator power consumption

0.75

µA

1. VDDA = 3.3 V, TA = -40 to 85 °C unless otherwise specified.

2. Guaranteed by design, not tested in production.

Table 37. LSI oscillator characteristics(1)

Symbol

Parameter

Min

Typ

Max

Unit

Table 38. PLL characteristics

Symbol

Parameter

Value

Unit

Min

Typ

Max

fPLL_IN

PLL input clock(1)

1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the

range defined by fPLL_OUT.

1(2)

8.0

24(2)

MHz

PLL input clock duty cycle

40(2)

-60(2)

fPLL_OUT

PLL multiplier output clock

16(2)

-48

MHz

tLOCK

PLL lock time

200(2)

2. Guaranteed by design, not tested in production.

µs

JitterPLL

Cycle-to-cycle jitter

300(2)

Table 39. Flash memory characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

1. Guaranteed by design, not tested in production.

Unit

tprog

16-bit programming time TA = -40 to +85 °C

53.5

µs

tERASE Page erase time(2)

2. Page size is 1KB for STM32F030x4/6/8 devices and 2KB for STM32F030xC devices

TA = -40 to +85 °C

tME

Mass erase time

TA = -40 to +85 °C

IDD

Supply current

Write mode

Erase mode

Vprog

Programming voltage

2.4

3.6

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