STS01DTP06 datasheet(2/8 Pages) STMICROELECTRONICS

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STS01DTP06

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Table 3: Absolute Maximum Ratings

For PNP type voltage and current values are negative.

Table 4: Thermal Data

(1) When mounted on 1 inch square pad of 2 oz. copper, t

≤10 sec

Table 5: Q1-NPN Transistor Electrical Characteristics (Tcase = 25 oC unless otherwise specified)

* Pulsed: Pulsed duration = 300 ms, duty cycle

≤ 1.5 %.

Symbol

Parameter

NPN

PNP

Unit

VCBO

Collector-Base Voltage (IE = 0)

-60

VCEO

Collector-Emitter Voltage (IB = 0)

-30

VEBO

Emitter-Base Voltage (IC= 0)

5-5

Collector Current

3-3

ICM

Collector Peak Current (tp < 5ms)

6-6

Base Current

1-1

IBM

Base Peak Current (tp < 1ms)

2-2

Ptot

Total Dissipation at TC = 25 oC single

Ptot

Total Dissipation at TC = 25 oC couple

1.6

Tstg

Storage Temperature

-65 to 150

°C

Max. Operating Junction Temperature

150

°C

Symbol

Parameter

Unit

Rthj-amb(1) Thermal Resistance Junction-ambient

Max

(Single Operation)

62.5

oC/W

Rthj-amb(1) Thermal Resistance Junction-ambient

Max

(Dual Operation)

oC/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off Current

(IE = 0)

VCB = 60 V

0.1

µA

ICEO

Collector Cut-off Current

(IB = 0)

VCE = 30 V

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

µA

V(BR)CEO* Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 10 mA

VCE(sat)* Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 10 mA

IC = 2 A

IB = 100 mA

0.35

0.7

VBE(sat)* Base-Emitter

Saturation Voltage

IC = 1 A

IB = 10 mA

0.85

1.1

hFE*

DC Current Gain

IC = 1 A

VCE = 2 V

IC = 3 A

VCE = 2 V

100

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