STS01DTP06 datasheet(3/8 Pages) STMICROELECTRONICS

部件名	STS01DTP06

功能描述	DUAL NPN-PNP COMPLEMENTARY BIPOLAR TRANSISTOR

PDF	8 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STS01DTP06

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Table 6: Q2-PNP Transistor Electrical Characteristics (Tcase = 25 oC unless otherwise specified)

* Pulsed: Pulsed duration = 300 ms, duty cycle

≤ 1.5 %.

Figure 3: Reverse Biased Area Q1 NPN Tran-

sistor

Figure 4: DC Current Gain Q1 NPN Transistor

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off Current

(IE = 0)

VCB = -60 V

-0.1

µA

ICEO

Collector Cut-off Current

(IB = 0)

VCE = -30 V

-1

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5 V

-1

µA

V(BR)CEO* Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = -10 mA

-30

VCE(sat)* Collector-Emitter

Saturation Voltage

IC = -1 A

IB = -10 mA

IC = -2 A

IB = -100 mA

-0.35

-1

-0.7

VBE(sat)* Base-Emitter

Saturation Voltage

IC = -1 A

IB = -10 mA

-0.85

-1.1

hFE*

DC Current Gain

IC = -1 A

VCE = -2 V

IC = -3 A

VCE = -2 V

100

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