P1020HDB datasheet(4/4 Pages) NIKOSEM

部件名	P1020HDB

功能描述	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

制造商	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

网页	http://www.niko-sem.com

标志

4 / 4 page

H-6-1

N-Channel Enhancement Mode

Field Effect Transistor

P1020HDB

TO-252

Halogen-Free & Lead-Free

NIKO-SEM

REV 1.0

100ms

10ms

1ms

0.1

100

1000

NOTE :

1.VGS= 10V

2.TC=25˚C

3.RθJC = 2.4˚C/W

4.Single Pulse

Operation in This

Area is Limited by

RDS(ON)

Gate charge Characteristics

Qg , Total Gate Charge(nC)

Source-Drain Diode Forward Voltage

VSD, Source-To-Drain Voltage(V)

Safe Operating Area

Single Pulse Maximum Power Dissipation

Single Pulse Time(s)

VDS, Drain-To-Source Voltage(V)

Transient Thermal Response Curve

T1 , Square Wave Pulse Duration[sec]

VDS=160V

ID=10A

100

200

300

400

500

0.001

0.01

0.1

100

Single Pulse

RθJC = 2.4 ˚C/W

TC=25˚C

25℃

150℃

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

single pulse

Duty cycle=0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.0001

0.001

0.01

0.1

100

Notes

1.Duty cycle, D= t1 / t2

2.RthJC = 2.4 ℃/W

3.TJ-TC = P*RthJC(t)

4.RthJC(t) = r(t)*RthJC

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