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P1020HDB 数据表(PDF) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

部件名 P1020HDB
功能描述  N-Channel Enhancement Mode Field Effect Transistor
PDF  4 Pages
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制造商  NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]
网页  http://www.niko-sem.com
标志 NIKOSEM - NIKO SEMICONDUCTOR CO., LTD.

P1020HDB 数据表(HTML) 2 Page - NIKO SEMICONDUCTOR CO., LTD.

  P1020HDB Datasheet HTML 1Page - NIKO SEMICONDUCTOR CO., LTD. P1020HDB Datasheet HTML 2Page - NIKO SEMICONDUCTOR CO., LTD. P1020HDB Datasheet HTML 3Page - NIKO SEMICONDUCTOR CO., LTD. P1020HDB Datasheet HTML 4Page - NIKO SEMICONDUCTOR CO., LTD.  
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2
H-6-1
N-Channel Enhancement Mode
Field Effect Transistor
P1020HDB
TO-252
Halogen-Free & Lead-Free
NIKO-SEM
REV 1.0
Zero Gate Voltage Drain Current
IDSS
VDS = 200V, VGS = 0V
1
A
VDS = 160V, VGS = 0V, TJ = 125 ° C
10
Drain-Source On-State
Resistance
1
RDS(ON)
VGS =10V, ID = 5A
261
325
mΩ
VGS =4.5V, ID = 5A
364
440
Forward Transconductance
1
gfs
VDS = 10V, ID = 5A
6
S
DYNAMIC
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
372
pF
Output Capacitance
Coss
69
Reverse Transfer Capacitance
Crss
11
Total Gate Charge
2
Qg
VDS = 160V , ID =10A ,
VGS = 10V
12.7
nC
Gate-Source Charge
2
Qgs
1.7
Gate-Drain Charge
2
Qgd
5.5
Turn-On Delay Time
2
td(on)
VDS = 100V , ID  10A,
VGS = 10V, RGEN = 6Ω
10
nS
Rise Time
2
tr
30
Turn-Off Delay Time
2
td(off)
24
Fall Time
2
tf
35
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current
3
IS
10
A
Forward Voltage
1
VSD
IF = 10A, VGS = 0V
1
V
Diode Reverse Recovery Time
trr
IF= 10A, dI/dt=100A/μs
103
nS
Diode Reverse Recovery Charge
Qrr
377
nC
1Pulse test : Pulse Width  300 sec, Duty Cycle  2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.



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