PE614DX datasheet(1/4 Pages) NIKOSEM

部件名	PE614DX

功能描述	Dual N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

Scroll/Zoom	100%

制造商	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

网页	http://www.niko-sem.com

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1 / 4 page

REV1.1

1

E-26-2

Dual N-Channel Enhancement Mode

Field Effect Transistor

PE614DX

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

D1 D1 D2 D2

S1 G1 S2 G2

#1

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Gate-Source Voltage

VGS

±10

V

Continuous Drain Curren

3

TC = 25 °C

ID

30

A

TC = 100 °C

19

TA = 25 °C

11

TA = 70 °C

9

Pulsed Drain Current

1

IDM

80

Avalanche Current

IAS

22

Avalanche Energy

L = 0.1mH

EAS

24

mJ

Power Dissipation

TC = 25 °C

PD

17.8

W

TC = 100 °C

7

TA = 25 °C

2.5

TA = 70 °C

1.6

ESD Class

HBM

2kV

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATING

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

2

RJA

50

°C / W

Junction-to-Case

RJC

7

1Pulse width limited by maximum junction temperature.

2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA =25° C.

3Package limitation current is 7A.

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

20V

12.5mΩ

30A

G : GATE

D : DRAIN

S : SOURCE

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