PE614DX datasheet(2/4 Pages) NIKOSEM

2 / 4 page

REV1.1

E-26-2

Dual N-Channel Enhancement Mode

Field Effect Transistor

PE614DX

PDFN 3x3P

Halogen-Free & Lead-Free

NIKO-SEM

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

0.35

0.67

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±8V

A

Zero Gate Voltage Drain Current

IDSS

VDS = 16V, VGS = 0V

A

VDS = 10V, VGS = 0V, TJ = 125 °C

Drain-Source On-State

Resistance

RDS(ON)

VGS = 4.5V, ID = 3A

8.5

12.5

mΩ

VGS = 3.9V, ID = 3A

8.7

10.2

13.7

VGS = 2.5V, ID = 3A

11.5

VGS = 1.8V, ID = 3A

12.7

14.2

20.2

Forward Transconductance

gfs

VDS = 5V, ID = 3A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 10V, f = 1MHz

1105

Output Capacitance

Coss

198

Reverse Transfer Capacitance

Crss

169

Total Gate Charge

Qg(VGS=4.5V)

VDS =10V,ID = 3A

Qg(VGS=3.9V)

Gate-Source Charge

Qgs

1.4

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 10V,

ID  3A, VGS = 4.5V, RGEN = 6Ω

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)

Continuous Current

14.8

Forward Voltage

VSD

IF = 3A, VGS = 0V

1.2

Reverse Recovery Time

trr

IF = 3A, dlF/dt = 100A / S

VGS = 0V

Reverse Recovery Charge

Qrr

5.4

1Pulse test : Pulse Width

 300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 7A.

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