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V62/18609-01XE-R 数据表(PDF) 20 Page - Texas Instruments

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部件名 V62/18609-01XE-R
功能描述  200-MHz, CMOS operational amplifier
PDF  29 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

V62/18609-01XE-R 数据表(HTML) 20 Page - Texas Instruments

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Place bypass capacitors
close to power pins.
Place an input resistor close to pin 2
and 6 to minimize stray capacitance.
Place output resistors close
to output pins (pin 1 and 7) to
minimize parasitic capacitance.
Ground and power plane removed from inner layers.
Ground and power plane exist on inner layers.
Place bypass capacitors
close to power pins.
Remove GND and power plane
under pins 1, 2, 7, and 6 to
minimize stray PCB capacitance.
Place feedback resistor on the bottom of
PCB between positive supply pin (8) and
inverting input pins (2, 6).
Noninverting inputs (pin 3 and 5)
terminated in 50
Ÿ.
1
2
3
4
8
7
6
5
A
B
20
OPA2356-EP
SBOS955 – FEBRUARY 2019
www.ti.com
Submit Documentation Feedback
Copyright © 2019, Texas Instruments Incorporated
10 Layout
10.1 Layout Guidelines
Good high-frequency PC board layout techniques should be employed for the OPA2356-EP. Generous use of
ground planes, short direct signal traces, and a suitable bypass capacitor located at the V+ pin assure clean,
stable operation. Large areas of copper also provide a means of dissipating heat that is generated within the
amplifier in normal operation.
Sockets are not recommended for use with any high-speed amplifier.
A 10-µF ceramic bypass capacitor is the minimum recommended value; adding a 1-µF or larger tantalum
capacitor in parallel can be beneficial when driving a low-resistance load. Providing adequate bypass
capacitance is essential to achieving very low harmonic and intermodulation distortion.
10.2 Layout Example
Figure 37. Example Layout



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