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V62/18609-01XE-R 数据表(PDF) 4 Page - Texas Instruments |
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V62/18609-01XE-R 数据表(HTML) 4 Page - Texas Instruments |
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4 / 29 page ![]() 4 OPA2356-EP SBOS955 – FEBRUARY 2019 www.ti.com Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails should be current limited to 10 mA or less. (3) Short-circuit to ground one amplifier per package. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VS Supply voltage, V+ to V– 7.5 V Signal input pins, voltage(2) (V–) – 0.5 (V+) + 0.5 V Signal input pins, current(2) 10 mA Output short-circuit(3) Continuous TA Operating temperature –55 150 °C TJ Junction temperature 160 °C Tstg Storage temperature –65 150 °C (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V Charged-device model (CDM), per AEC Q100-011 ±1500 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VS Supply voltage, V– to V+ 2.7 5.5 V TA Operating free-air temperature –55 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) OPA2356-EP UNIT DGK (VSSOP) 8 PINS RθJA Junction-to-ambient thermal resistance 171.4 °C/W RθJC(top) Junction-to-case (top) thermal resistance 60.2 °C/W RθJB Junction-to-board thermal resistance 92.5 °C/W ψJT Junction-to-top characterization parameter 7.3 °C/W ψJB Junction-to-board characterization parameter 90.9 °C/W |
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