SM7312DHKP datasheet(2/11 Pages) SINOPWER

2 / 11 page

SM7312DHKP

Rev. A.1 - January, 2019

www.sinopowersemi.com

Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)

Symbol

Parameter

Rating

Unit

Common Ratings

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

±20

Maximum Junction Temperature

150

°C

TSTG

Storage Temperature Range

-55 to 150

Diode Continuous Forward Current

TC=25°C

11.4

Continuous Drain Current

TC=25°C

22 a

TC=100°C

22 a

IDM b

Pulsed Drain Current

TC=25°C

Maximum Power Dissipation

TC=25°C

TC=100°C

RqJC

Thermal Resistance-Junction to Case

Steady state

°C/W

Continuous Drain Current

TA=25°C

10.7

TA=70°C

8.5

IDM b

Pulsed Drain Current

TC=25°C

Maximum Power Dissipation

TA=25°C

1.4

TA=70°C

0.9

RqJAc

Thermal Resistance-Junction to Ambient

t ≤ 10s

°C/W

Steady state

IAS d

Avalanche Current, Single pulse

L=0.1mH

EAS d

Avalanche Energy, Single pulse

L=0.1mH

39.2

Note a：Max. continuous current is limited by bonding wire.

Note b：Pulse width limited by max. junction temperature.

Note c：Surface mounted on 1in2 pad area, steady state t = 999s.

Note d：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).

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