EMB07P03CS datasheet(2/5 Pages) EXCELLIANCE

2 / 5 page

2016/7/20

p.2

EMB07P03CS

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP

MAX

STATIC

Drain‐Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = ‐250A

‐30

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = ‐250A

‐1 ‐1.5

‐2

Gate‐Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = ‐24V, VGS = 0V

‐1

A

VDS = ‐20V, VGS = 0V, TJ = 125 °C

‐10

On‐State Drain Current

ID(ON)

VDS = ‐5V, VGS = ‐10V ‐80

Drain‐Source On‐State Resistance

RDS(ON)

VGS = ‐10V, ID = ‐24A

5.5

6.8

mΩ

VGS = ‐4.5V, ID = ‐15A

8.5

11.5

Forward Transconductance

gfs

VDS = ‐5V, ID = ‐24A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = ‐15V, f = 1MHz

4294

Output Capacitance

Coss

634

Reverse Transfer Capacitance

Crss

566

Gate Resistance

VGS = 15mV, VDS = 0V, f = 1MHz

3.0

Total Gate Charge

1,2

VDS = ‐15V, VGS = ‐10V,

ID = ‐25A

62.4

Gate‐Source Charge

1,2

Qgs

8.5

Gate‐Drain Charge

1,2

Qgd

Turn‐On Delay Time

1,2

td(on)

Rise Time

1,2

VDS = ‐15V,

Turn‐Off Delay Time

1,2

td(off)

ID = ‐1A, VGS = ‐10V, RGS = 2.7Ω

Fall Time

1,2

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

‐30

Pulsed Current

ISM

‐120

Forward Voltage

VSD

IF = ‐24A, VGS = 0V

‐1.2

Reverse Recovery Time

trr

IF = IS, dlF/dt = 100A / S

Reverse Recovery Charge

Qrr

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

EMB07P03CS 数据表(PDF) 2 Page - Excelliance MOS Corp.

EMB07P03CS 数据表(HTML) 2 Page - Excelliance MOS Corp.

Html Pages

1 2 3 4 5

数据表下载