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EMB07P03CS 数据表(PDF) 1 Page - Excelliance MOS Corp. |
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EMB07P03CS 数据表(HTML) 1 Page - Excelliance MOS Corp. |
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1 / 5 page ![]() 2016/7/20 p.1 EMB07P03CS G S D P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 6.8mΩ ID ‐80A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS ±25 V Continuous Drain Current TC = 25 °C ID ‐80 A TC = 100 °C ‐51 Pulsed Drain Current 1 IDM ‐240 Avalanche Current IAS ‐35 Avalanche Energy L = 0.1mH, ID=‐35A, RG=25Ω EAS 61.25 mJ Power Dissipation TC = 25 °C PD 78 W TC = 100 °C 31 Operating Junction & Storage Temperature Range Tj, Tstg ‐55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction‐to‐Case RJC 1.6 °C / W Junction‐to‐Ambient 3 RJA 62.5 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% |
类似零件编号 - EMB07P03CS |
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类似说明 - EMB07P03CS |
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