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RF63W 数据表(PDF) 8 Page - HOPE Microelectronics CO., Ltd. |
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RF63W 数据表(HTML) 8 Page - HOPE Microelectronics CO., Ltd. |
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8 / 91 page ![]() ADVANCED COMMUNICATIONS & SENSING Page 8 of 91 RF63 Tel: +86-755-82973805 Fax: +86-755-82973550 E-mail: sales@hoperf.com http://www.hoperf.com Symbol Description Conditions Min Typ Max Unit IDDSL Supply current, Sleep mode - 0.1 2 µA IDDST Supply current in standby mode, CLKOUT disabled (2) - 65 80 µA IDDFS Supply current in FS mode Frequency synthesizer running - 1.3 1.7 mA IDDR Supply current in Rx mode - 3.0 3.5 mA IDDT Supply current in Tx mode Output power = +10 dBm Output power = 1dBm (1) - - 25 16 30 21 mA mA 2. Electrical Characteristics 2.1. ESD Notice The RF63 is a high performance radio frequency device. It satisfies: • Class 2 of the JEDEC standard JESD22-A114-B (Human Body Model), except on pins 3-4-5-27-28-29-32 where it satisfies Class 1A. • Class III of the JEDEC standard JESD22-C101C (Charged Device Model) on all pins. It should thus be handled with all the necessary ESD precautions to avoid any permanent damage. 2.2. Absolute Maximum Ratings Stresses above the values listed below may cause permanent device failure. Exposure to absolute maximum ratings for extended periods may affect device reliability. Table 3: Absolute Maximum Ratings Symbol Description Min Max Unit VDDmr Supply voltage -0.3 3.7 V Tmr Storage temperature -55 125 ° C Pmr Input level - 0 dBm 2.3. Operating Range Table 4: Operating Range Symbol Description Min Max Unit VDDop Supply Voltage 2.1 3.6 V Trop Temperature -40 +85 ° C ML Input Level - 0 dBm 2.4. Chip Specification Conditions: Temp = 25 ° C, VDD = 3.3 V, crystal freq uency = 12.8 MHz, carrier frequency = 869 or 915 MHz, modulation FSK, data rate = 25 kb/s, Fdev = 50 kHz, fc = 100 kHz, unless otherwise specified. 2.4.1. Power Consumption Table 5: Power Consumption Specification Crystal oscillator running (1) Guaranteed by design and characterization (2) Crystal Cload=10pF, C0=2.5pF, Rm=15 Ohms |
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