NM1482KSLAXCL datasheet(13/121 Pages) NANYA

13 / 121 page

Version 1.6

Nanya Technology Corp.

05/2018

4Gb SLC NAND + 2Gb LPDDR2

NM148(F)2KSLAXCL/NM1482NSLAXCL

NTC Proprietary

Level: Property

Descriptions

The device is a single 1.8V 4Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable

Read-Only Memory (NAND E2PROM) organized as X8: (4096 +256) bytes x 64 pages x 2048 blocks or X16:

(2048 + 128) words x 64 pages x 2048 blocks.

The device has two 4352-bytes or 2176-words static registers which allow program and read data to be

transferred between the register ad the memory cell array in 4352-bytes or 2176-words increments. The

Erase operation is implemented in a single block unit (X8=256 Kbytes + 16 Kbytes: 4352 bytes x 64 pages) or

(X16=128 Kwords + 8 Kwords: 2176 words x 64 pages).

The device is a serial-type memory device which utilizes the I/O pins for both address and data input/output

as well as for command inputs. The Erase and Program operations are automatically executed making the

device most suitable for applications such as solid-state file storage, voice recording, image file memory for

still cameras and other systems which require high-density non-volatile memory data storage.

NM1482KSLAXCL 数据表(PDF) 13 Page - Nanya Technology Corporation.