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M28W320FSB 数据表(PDF) 18 Page - STMicroelectronics |
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M28W320FSB 数据表(HTML) 18 Page - STMicroelectronics |
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18 / 55 page ![]() M28W320FST, M28W320FSB, M28W640FST, M28W640FSB 18/55 Table 8. Program, Erase Times and Program/Erase Endurance Cycles Note: 1. Typical time to program a Main or Parameter Block using the Double Word Program and the Quadruple Word Program commands respectively. Parameter Test Conditions M28W320FST, M28W320FST M28W640FST, M28W640FSB Unit Min Typ Max Word Program VPP = VDD 10 200 µs Double Word Program VPP = 12V ±5% 10 200 µs Quadruple Word Program VPP = 12V ±5% 10 200 µs Main Block Program VPP = 12V ±5% 0.16/0.08 (1) 5s VPP = VDD 0.32 5 s Parameter Block Program VPP = 12V ±5% 0.02/0.01 (1) 4s VPP = VDD 0.04 4 s Main Block Erase VPP = 12V ±5% 110 s VPP = VDD 110 s Parameter Block Erase VPP = 12V ±5% 0.4 10 s VPP = VDD 0.4 10 s Program/Erase Cycles (per Block) 100,000 cycles Data Retention 20 years |
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