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PXFE211507FC-V1-R2 数据表(PDF) 3 Page - Cree, Inc

部件名 PXFE211507FC-V1-R2
功能描述  Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz
PDF  8 Pages
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制造商  CREE [Cree, Inc]
网页  http://www.cree.com/
标志 CREE - Cree, Inc

PXFE211507FC-V1-R2 数据表(HTML) 3 Page - Cree, Inc

  PXFE211507FC-V1-R2 Datasheet HTML 1Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 2Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 3Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 4Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 5Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 6Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 7Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 8Page - Cree, Inc  
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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 02, 2019-01-15
3
PXFE211507FC
Typical Performance (data taken in test fixture)
0
10
20
30
40
50
-70
-60
-50
-40
-30
-20
25
30
35
40
45
50
55
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ(MAIN) = 900 mA, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
ACPU
ACPL
Efficiency
pxfe211507fc_g2
30
35
40
45
50
55
60
15
16
17
18
19
20
21
2000
2050
2100
2150
2200
2250
Frequency (MHz)
Single-carrier WCDMA Broadband
Performance
VDD = 28 V, IDQ = 900 mA, POUT = 46.99 dBm,
3GPP WCDMA signal, PAR = 10 dB
Efficiency
Gain
pxfe211507fc_g3
-30
-25
-20
-15
-10
-5
0
-40
-35
-30
-25
-20
-15
-10
2000 2050 2100 2150 2200 2250 2300
Frequency (MHz)
Single-carrier WCDMA Broadband
Performance
VDD = 28 V, IDQ= 900 mA, POUT = 46.99 dBm,
3GPP WCDMA signal, PAR = 10 dB
ACPU
ACPL
IRL
pxfe211507fc_g4
0
10
20
30
40
50
60
15
16
17
18
19
20
21
29
33
37
41
45
49
53
57
Output Power (dBm)
CW Performance
VDD = 28 V, IDQ = 900 mA
2110 MHz Gain
2140 MHz Gain
2170 MHz Gain
2110 MHz Eff
2140 MHz Eff
2170 MHz Eff
pxfe211507fc_g5



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