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PXFE211507FC-V1-R2 数据表(PDF) 4 Page - Cree, Inc

部件名 PXFE211507FC-V1-R2
功能描述  Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 2110 ??2170 MHz
PDF  8 Pages
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制造商  CREE [Cree, Inc]
网页  http://www.cree.com/
标志 CREE - Cree, Inc

PXFE211507FC-V1-R2 数据表(HTML) 4 Page - Cree, Inc

  PXFE211507FC-V1-R2 Datasheet HTML 1Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 2Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 3Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 4Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 5Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 6Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 7Page - Cree, Inc PXFE211507FC-V1-R2 Datasheet HTML 8Page - Cree, Inc  
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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 02, 2019-01-15
4
PXFE211507FC
Typical Performance (data taken in test fixture)
Load Pull Performance
Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, 28 V, IDQ = 900 mA
P1dB
Max Output Power
Max Drain Efficiency
Freq
[MHz]
Zs
[W
]
ZL
[W]
Gain
[dB]
P1dB
[dBm]
P1dB
[W]
hD
[%]
ZL
[W]
Gain
[dB]
P1dB
[dBm]
P1dB
[W]
hD
[%]
2110
3.3-j5.6
1.6-j3.5
18.6
52.75
188.4
52.7
3-j2
21.2
51.46
140
66.2
2170
5.1-j5
1.5-j3.9
18.3
52.80
190.6
51.4
3.7-j2.3
21.2
50.78
119.7
66.8
P3dB
Max Output Power
Max Drain Efficiency
Freq
[MHz]
Zs
[W
]
ZL
[W]
Gain
[dB]
P3dB
[dBm]
P3dB
[W]
hD
[%]
ZL
[W]
Gain
[dB]
P3dB
[dBm]
P3dB
[W]
hD
[%]
2110
3.3-j5.6
1.8-j3.9
16.7
53.56
227
56.8
4.3-j1.33
19.9
50.76
119.1
68.0
2170
5.1-j5
1.65-j3.9
16.5
53.64
231.2
55.8
3.7-j2.3
19.2
51.56
143.2
68.2
0
10
20
30
40
50
60
15
16
17
18
19
20
21
29
33
37
41
45
49
53
57
Output Power (dBm)
CW Performance at various VDD
IDQ = 900 mA, ƒ = 2170 MHz
24 V Gain
28 V Gain
32 V Gain
24 V Eff
28 V Eff
32 V Eff
pxfe211507fc_g6
-25
-20
-15
-10
-5
0
11
13
15
17
19
21
1950
2050
2150
2250
2350
Frequency (MHz)
CW Performance Small Signal
Gain & Input Return Loss
VDD = 28 V, IDQ= 900 mA
IRL
Gain
pxfe211507fc_g7



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