GD25B16CSIG datasheet(52/53 Pages) GIGADEVICE

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3.3V Uniform Sector

Dual and Quad Serial Flash

GD25B16C

11. REVISION HISTORY

Version No

Description

Page

Date

1.0

Initial Release

All

2015-7-23

1.1

Modify AC CHARACTERISTICS: tCHCL Min.0.2 V/ns Change to

0.1 V/ns

tCLCH Min.0.2 V/ns Change to 0.1 V/ns

Modify POWER-ON TIMING: tPUW Min 1ms Change to 5ms

Modify Figure 40. Power-on Timing Sequence Diagram

---

2015-11-5

1.2

Modify AC CHARACTERISTICS: add tRST_R & tRST_P &

tRST_E

Modify POWER-ON TIMING: TVSL Min 10us Change to 5ms

---

2015-12-18

1.3

Modify the length the Unique ID from 64 bits to 128 bits

Modify tVSL from 5ms to 1.8ms

Modify VWI from 2.1~2.5V to 1.5~2.5V

Delete DATA RETENTION AND ENDURANCE

Delete Output Short Circuit Current

Modify VCC from -0.6~VCC+0.4 to -0.6~4.2V

Modify Icc9 from 400~800uA to 0.6~1.2mA

Add tRS to the AC Characteristic, of which the min value is 100us

Modify tBE1 max value from 0.3/0.7s to 0.8/1.2s (<50K/50-100K

cycling)

Modify tBE2 max value from 0.5/0.8s to 1.2/2.0s (<50K/50-100K

cycling)

Delete tRST_P and tRST_R

Add tRST, of which the max. value is 30us

Add J and E to 7th code of ordering information

Update the description of all packages

P42

P44

P45

P48

P49-51

2018-5-21

1.4

Modify 4BH command

Modify Ordering Information

P33

P48

2018-9-11

1.5

Modify tSE max value from 150/300ms to 300ms

Modify tBE1 max value from 0.8/1.2s to 1.2s

Modify tBE2 max value from 1.2/2.0s to 2.0s

P45

P46

2018-12-4

GD25B16CSIG 数据表(PDF) 52 Page - GigaDevice Semiconductor (Beijing) Inc.

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