GD25B64C datasheet(4/57 Pages) GIGADEVICE

4 / 57 page

3.3V Uniform Sector

Dual and Quad Serial Flash

GD25B64C

1. FEATURES

◆

64M-bit Serial Flash

◆

Fast Program/Erase Speed

-8192K-byte

-Page Program time: 0.6ms typical

-256 bytes per programmable page

-Sector Erase time: 50ms typical

-Block Erase time: 0.15/0.25s typical

◆

Standard, Dual, Quad SPI

-Chip Erase time: 25s typical

-Standard SPI: SCLK, CS#, SI, SO

-Dual SPI: SCLK, CS#, IO0, IO1

◆

Flexible Architecture

-Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3

-Uniform Sector of 4K-byte

-Uniform Block of 32/64K-byte

◆

High Speed Clock Frequency

-120MHz for fast read with 30PF load

◆

Low Power Consumption

-Dual I/O Data transfer up to 240Mbits/s

-1

μA typical stand-by active current

-Quad I/O Data transfer up to 480Mbits/s

-1

μA typical power down current

◆

Allows XIP (execute in place) Operation

◆

Advanced Security Features

- Continuous Read With 8/16/32/64-Byte Wrap

-128-bit Unique ID for each device

-3*1024-Byte Security Registers With OTP Locks

◆

Software Write Protection

-Discoverable parameters (SFDP) register

-Write protect all/portion of memory via software

-Top/Bottom Block protection

◆

Single Power Supply Voltage

-Full voltage range: 2.7~3.6V

◆

Cycling Endurance

-Minimum 100,000 Program/Erase Cycles

◆

Package Information

-SOP8 (208mil)

◆

Data Retention

-DIP8 (300mil)

-20-year data retention typical

-WSON8 (6*5mm)

-WSON8 (8*6mm)

GD25B64C 数据表(PDF) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

GD25B64C 数据表(HTML) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57

数据表下载