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HM722 数据表(PDF) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM722 数据表(HTML) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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4 / 13 page ![]() 4 Electrical Characteristics (continued) Symbol Parameter Conditions Min. Typ. Max. Unit tOR Overload recovery time VIN * Gain > VS 0.31 μs THD+N Total harmonic distortion + noise f = 1kHz, G = +1, VO = 3VPP 0.0013 % NOISE PERFORMANCE Vn Input voltage noise f = 0.1 to 10 Hz 8μVP-P en Input voltage noise density f = 10kHz 10 nV/√Hz POWER SUPPLY VS Operating supply voltage 2.3 5.5 V PSRR Power supply rejection ratio VS = 2.7V to 5.5V, VCM < VS+ − 2V 82 98 dB over Temperature 75 IQ Quiescent current (per amplifier) 820 1050 μA over Temperature 1250 THERMAL CHARACTERISTICS TA Operating temperature range -40 +125 ℃ θJA Package Thermal Resistance SC70-5 333 ℃/W SOT23-5 190 MSOP-8 216 SO-8 125 TSSOP-14 112 SO-14 115 VS =5.0V, TA =+25℃,VCM =VS /2, VO =VS /2, and RL = 10kΩ connected to VS /2, unless otherwise noted. Boldface limits apply over the specified temperature range, TA = −40 to +125 ℃. HM721, HM722, HM724 12MHz, High Slew Rate, RRIO CMOS Operational Amplifiers |
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