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GD25Q20CSFG 数据表(PDF) 42 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25Q20CSFG 数据表(HTML) 42 Page - GigaDevice Semiconductor (Beijing) Inc. |
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42 / 64 page ![]() 3.3V Uniform Sector Dual and Quad Serial Flash GD25Q20C 42 8. ELECTRICAL CHARACTERISTICS 8.1. POWER-ON TIMING Figure 38. Power-on Timing Sequence Diagram Vcc(max) Vcc(min) VWI tVSL Chip Selection is not allowed Device is fully accessible Time Table6. Power-Up Timing and Write Inhibit Threshold Symbol Parameter Min Max Unit tVSL VCC (min) To CS# Low 1.8 ms VWI Write Inhibit Voltage 1.5 2.5 V 8.2. INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1 (each Byte contains FFH). The Status Register contains 00H (all Status Register bits are 0). 8.3. ABSOLUTE MAXIMUM RATINGS Parameter Value Unit Ambient Operating Temperature -40 to 85 -40 to 105 -40 to 125 ℃ Storage Temperature -65 to 150 ℃ Applied Input/Output Voltage -0.6 to VCC+0.4 V Transient Input/Output Voltage (note: overshoot) -2.0 to VCC+2.0 V VCC -0.6 to 4.2 V |
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