SSM3J35FS datasheet(3/5 Pages) TOSHIBA

部件名	SSM3J35FS

功能描述	TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

PDF	5 Pages

Scroll/Zoom	100%

制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

标志

3 / 5 page

SSM3J35FS

2015-09-09

ID – VGS

Gate–source voltage VGS (V)

-0.01

-1

-1000

-2

-1

-0.1

-10

-100

ID – VDS

Drain–source voltage VDS (V)

-0.5

-1

-1.5

-2

Common Source

Ta = 25°C

-50

-100

-150

-200

-250

-2.5 V

-1.8 V

-1.5 V

VGS=-1.2 V

-25°C

Ta = 100°C

25°C

Common Source

VDS = -3 V

-3

-4 V

RDS (ON) – VGS

Gate–source voltage VGS (V)

-10

-8

-6

-4

-2

Drain current ID (mA)

-1

-1000

-10

-100

RDS (ON) – ID

-50

150

100

RDS (ON) – Ta

Ambient temperature Ta (°C)

RDS (ON) – VGS

Gate–source voltage VGS (V)

-10

-8

-6

-4

-2

Common Source

ID = -5 mA

Ta=100°C

25°C

-25°C

25°C

Ta=100°C

-25°C

VGS = -1.2 V

-4 V

-2.5 V

-1.5 V

Common Source

Ta = 25°C

-2.5 V, -50 mA

VGS =−1.2 V, ID=-2 mA

-4 V, -50 mA

-1.5 V, -5 mA

Common Source

ID = -50 mA

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