数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

SSM3J35FS 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 SSM3J35FS
功能描述  TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

SSM3J35FS 数据表(HTML) 2 Page - Toshiba Semiconductor

  SSM3J35FS Datasheet HTML 1Page - Toshiba Semiconductor SSM3J35FS Datasheet HTML 2Page - Toshiba Semiconductor SSM3J35FS Datasheet HTML 3Page - Toshiba Semiconductor SSM3J35FS Datasheet HTML 4Page - Toshiba Semiconductor SSM3J35FS Datasheet HTML 5Page - Toshiba Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
SSM3J35FS
2015-09-09
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
―
―
±10
μA
Drain–source breakdown voltage
V (BR) DSS ID = -0.1 mA, VGS = 0 V
-20
―
―
V
Drain cutoff current
IDSS
VDS = -20 V, VGS = 0 V
―
―
-1
μA
Gate threshold voltage
Vth
VDS = -3 V, ID = -1 mA
-0.4
―
-1.0
V
Forward transfer admittance
|Yfs|
VDS = -3 V, ID = -50 mA
(Note 1)
77
―
―
mS
Drain–source ON-resistance
RDS (ON)
ID = -50 mA, VGS = -4 V
(Note 1)
―
4.3
8
Ω
ID = -50 mA, VGS = -2.5 V
(Note 1)
―
5.6
11
ID = -5 mA, VGS = -1.5 V
(Note 1)
―
8.2
22
ID = -2 mA, VGS = -1.2 V
(Note 1)
―
11
44
Input capacitance
Ciss
VDS = -3 V, VGS = 0 V, f = 1 MHz
―
12.2
―
pF
Reverse transfer capacitance
Crss
―
6.5
―
Output capacitance
Coss
―
10.4
―
Switching time
Turn-on time
ton
VDD = -3 V, ID = -50 mA,
VGS = 0 to -2.5 V
―
175
―
ns
Turn-off time
toff
―
251
―
Drain–source forward voltage
VDSF
ID = 100 mA, VGS = 0 V
(Note 1)
―
0.83
1.2
V
Note 1: Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
Usage Considerations
Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-1 mA for the
SSM3J35FS). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than
Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on).
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
(c) VOUT
VDD = -3 V
Duty ≤ 1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
IN
0
-2.5 V
10 μs
VDD
OUT
RL
ton
90%
10%
-2.5 V
0 V
90%
10%
toff
tr
tf
VDS (ON)
VDD



Html Pages

1 2 3 4 5


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com