SSM3J56ACT datasheet(3/9 Pages) TOSHIBA

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SSM3J56ACT

5. Electrical Characteristics

Electrical Characteristics

5.1.

5.1. Static Characteristics (Unless otherwise specified, T

Static Characteristics (Unless otherwise specified, T

Static Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

Forward transfer admittance

(Note 1)

(Note 2)

(Note 3)

Symbol

IGSS

IDSS

V(BR)DSS

V(BR)DSX

Vth

RDS(ON)

|Yfs|

Test Condition

VGS = ±8 V, VDS = 0 V

VDS = -20 V, VGS = 0 V

ID = -1 mA, VGS = 0 V

ID = -1 mA, VGS = 5 V

VDS = -3 V, ID = -1 mA

ID = -800 mA, VGS = -4.5 V

ID = -500 mA, VGS = -2.5 V

ID = -200 mA, VGS = -1.8 V

ID = -100 mA, VGS = -1.5 V

ID = -10 mA, VGS = -1.2 V

VDS = -3 V, ID = -100 mA

Min



-20

-15

-0.3



0.5

Typ.



310

380

470

560

770

1.0

Max

±1

-1



-1.0

390

480

660

900

4000



Unit

µA

mΩ

Note 1: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-

source breakdown voltage is lowered in this mode.

Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-1 mA for

this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be

lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).

Take this into consideration when using the device.

Note 3: Pulse measurement.

5.2.

5.2. Dynamic Characteristics (Unless otherwise specified, T

Dynamic Characteristics (Unless otherwise specified, T

Dynamic Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25 



))))

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time (turn-on time)

Switching time (turn-off time)

Symbol

Ciss

Crss

Coss

ton

toff

Test Condition

VDS = -10 V, VGS = 0 V,

f = 1 MHz

VDD = -10 V, ID = -200 mA

VGS = 0 to -2.5 V, RG = 50 Ω

Duty ≤ 1 %, VIN: tr, tf < 5 ns,

Common source, See Chapter 5.3.

Min



Typ.

100

Max



Unit

5.3.

5.3. Switching Time Test Circuit

Switching Time Test Circuit

Fig.

Fig. 5.3.1

5.3.1

5.3.1 Switching Time Test Circuit

Switching Time Test Circuit

Fig.

Fig. 5.3.2

5.3.2

5.3.2 Input Waveform/Output Waveform

Input Waveform/Output Waveform

2016-09-13

Rev.2.0

SSM3J56ACT 数据表(PDF) 3 Page - Toshiba Semiconductor

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