| 数据搜索系统,热门电子元器件搜索 |
|
SSM3J56ACT 数据表(PDF) 4 Page - Toshiba Semiconductor |
|
|
|||||||||||||||||||||||||||||
SSM3J56ACT 数据表(HTML) 4 Page - Toshiba Semiconductor |
|
4 / 9 page ![]() SSM3J56ACT 4 5.4. 5.4. 5.4. 5.4. Gate Charge Characteristics (Unless otherwise specified, T Gate Charge Characteristics (Unless otherwise specified, T Gate Charge Characteristics (Unless otherwise specified, T Gate Charge Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Qg Qgs1 Qgd Test Condition VDD = -10 V, VGS = -4.5 V, ID = -800 mA Min Typ. 1.6 0.2 0.4 Max Unit nC 5.5. 5.5. 5.5. 5.5. Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, T Source-Drain Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) Characteristics Diode forward voltage (Note 1) Symbol VDSF Test Condition ID = 1.4 A, VGS = 0 V Min Typ. 1.0 Max 1.3 Unit V Note 1: Pulse measurement. 6. 6. 6. 6. Marking Marking Marking Marking Fig. Fig. Fig. Fig. 6.1 6.1 6.1 6.1 Marking Marking Marking Marking 7. 7. 7. 7. Equivalent Circuit Equivalent Circuit Equivalent Circuit Equivalent Circuit Fig. Fig. Fig. Fig. 7.1 7.1 7.1 7.1 Equivalent Circuit Equivalent Circuit Equivalent Circuit Equivalent Circuit 2016-09-13 Rev.2.0 ©2015 Toshiba Corporation |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |