BDX53B BDX53C BDX54B BDX54C

3

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

1000

500

R

θJC(t) = r(t) RθJC

R

θJC = 1.92°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

SINGLE

PULSE

0.03

0.3

3.0

30

300

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25°C

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

1.0

Figure 5. Active–Region Safe Operating Area

20

2.0

0.05

10

20

100

TJ = 150°C

0.2

5.0

0.5

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10

30

70

1.0

0.1

dc

2.0

50

3.0

5.0 7.0

5.0 ms

1.0 ms

100

µs

BDX53B, BDX54B

BDX53C, BDX54C

CURVES APPLY BELOW RATED VCEO

0.02

500

µs

There are two limitations on the power handling ability of a

transistor average junction temperature and second break-

down. Safe operating area curves indicate IC –VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

t 150_C. TJ(pk) may be calculated from the data in Fig-

ure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

10,000

1.0

Figure 6. Small-Signal Current Gain

f, FREQUENCY (kHz)

10

2.0

5.0

10

20

50

100

200

1000

500

300

100

5000

20

3000

200

500

2000

1000

30

50

TJ = 25°C

VCE = 3.0 V

IC = 3.0 A

300

0.1

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

30

1.0

2.0

5.0

20

100

10

200

100

70

50

TJ = + 25°C

Cib

Cob

50

0.2

0.5

PNP

NPN

PNP

NPN