BDX53B BDX53C BDX54B BDX54C

4

Motorola Bipolar Power Transistor Device Data

0.1

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.2

0.3

0.5 0.7 1.0

2.0

10

500

300

TJ = 150°C

25

°C

– 55

°C

VCE = 4.0 V

200

7.0

NPN

BDX53B, 53C

PNP

BDX54B, 54C

20,000

5000

10,000

3000

2000

1000

3.0

5.0

0.1

IC, COLLECTOR CURRENT (AMP)

0.2

0.3

0.5 0.7

1.0

2.0

10

500

300

TJ = 150°C

25

°C

– 55

°C

200

7.0

20,000

5000

10,000

3000

2000

1000

3.0

5.0

VCE = 4.0 V

Figure 9. Collector Saturation Region

3.0

IB, BASE CURRENT (mA)

0.3

0.5

1.0

2.0

3.0

5.0 7.0

30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A

6.0 A

1.0

0.7

20

10

3.0

IB, BASE CURRENT (mA)

0.3

0.5

1.0

2.0

3.0

5.0 7.0

30

2.6

2.2

1.8

1.4

IC = 2.0 A

TJ = 25°C

4.0 A

6.0 A

1.0

0.7

20

10

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

Figure 10. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

TJ = 25°C

VBE @ VCE = 4.0 V

VBE @ VCE = 4.0 V

VCE(sat) @ IC/IB = 250

TJ = 25°C

0.1

0.2 0.3

0.5 0.7

1.0

2.0

10

7.0

3.0

5.0

0.1

0.2 0.3

0.5 0.7

1.0

2.0

10

7.0

3.0

5.0

3.0

2.5

2.0

1.5

1.0

0.5

3.0

2.5

2.0

1.5

1.0

0.5