IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY08N100P

IXTA08N100P

IXTP08N100P

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Note 1. Pulse test, t

 300s, duty cycle, d 2%.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

0.35

0.60

S

C

iss

240

pF

C

oss

V

18

pF

C

rss

3.6

pF

Q

g(on)

11.3

nC

Q

gs

V

1.7

nC

Q

gd

6.7

nC

t

d(on)

19

ns

t

r

37

ns

t

d(off)

35

ns

t

f

34

ns

R

thJC

3.0

C/W

R

thCS

TO-220

0.50

C/W

Resistive Switching Times

V

R

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

0.8

A

I

SM

Repetitive, Pulse Width Limited by T

JM

2.4

A

V

SD

I

1.5

V

t

rr

750

ns

I