IXTP08N100P datasheet(4/6 Pages) IXYS

部件名	IXTP08N100P

功能描述	N-Channel Enhancement Mode Power MOSFET

PDF	6 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

4 / 6 page

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTY08N100P

IXTA08N100P

IXTP08N100P

Fig. 7. Input Admittance

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

3.03.5

4.04.5

5.05.5

6.06.5

VGS - Volts

TJ = 125

- 40

VDS = 30V

Fig. 8. Transconductance

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

ID - Amperes

TJ = - 40

125

VDS = 30V

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0.0

0.4

0.8

1.2

1.6

2.0

2.4

0.4

0.5

0.6

0.7

0.8

0.9

VSD - Volts

TJ = 125

TJ = 25

Fig. 10. Gate Charge

QG - NanoCoulombs

VDS = 500V

I D = 0.4A

I G = 1mA

Fig. 11. Capacitance

100

1,000

VDS - Volts

f = 1MHz

Ciss

Crss

Coss

Fig. 12. Maximum Transient Thermal Impedance

0.1

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

IXTP08N100P 数据表(PDF) 4 Page - IXYS Corporation

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