K6R1016V1D-UI08 datasheet(5/9 Pages) SAMSUNG

部件名	K6R1016V1D-UI08

功能描述	256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

PDF	9 Pages

Scroll/Zoom	100%

制造商	SAMSUNG [Samsung semiconductor]

网页	http://www.samsung.com/Products/Semiconductor

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5 / 9 page

PRELIMINARY

Rev. 3.0

- 5 -

July 2004

PRELIMINARY

K6R1004C1D

CMOS SRAM

TEST CONDITIONS

Parameter

Value

Input Pulse Levels

0V to 3V

Input Rise and Fall Times

3ns

Input and Output timing Reference Levels

1.5V

Output Loads

See below

AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)

Output Loads(B)

DOUT

5pF*

480

Ω

255Ω

for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ

+5.0V

* Including Scope and Jig Capacitance

Output Loads(A)

DOUT

RL = 50

Ω

ZO = 50

Ω

VL = 1.5V

30pF*

* Capacitive Load consists of all components of the

test environment.

READ CYCLE*

* The above parameters are also guaranteed at industrial temperature range.

Parameter

Symbol

K6R1004C1D-10

Unit

Min

Max

Read Cycle Time

tRC

Address Access Time

tAA

-10

Chip Select to Output

tCO

-10

Output Enable to Valid Output

tOE

-5

Chip Enable to Low-Z Output

tLZ

Output Enable to Low-Z Output

tOLZ

Chip Disable to High-Z Output

tHZ

Output Disable to High-Z Output

tOHZ

Output Hold from Address Change

tOH

Chip Selection to Power Up Time

tPU

Chip Selection to Power DownTime

tPD

-10

K6R1016V1D-UI08 数据表(PDF) 5 Page - Samsung semiconductor

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