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STP8NK85Z 数据表(PDF) 6 Page - STMicroelectronics

部件名 STP8NK85Z
功能描述  N-CHANNEL 850V -1.1ohm - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP8NK85Z 数据表(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STP8NK85Z - STF8NK85Z
6/15
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current
Source-drain current (pulsed)
6.7
26.7
A
A
VSD
(2)
2.
Pulse width limited by safe operating area
Forward on voltage
ISD = 6.7 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 6.7 A, di/dt = 100
A/µs
VDD = 35 V, Tj = 25°C
(see Figure 20)
530
4.5
17
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6.7 A, di/dt = 100
A/µs
VDD = 35 V, Tj = 150°C
(see Figure 20)
690
6.4
17
ns
µC
A



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