STP8NK85Z datasheet(5/15 Pages) STMICROELECTRONICS

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STP8NK85Z - STF8NK85Z

Electrical characteristics

5/15

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID =1MA, VGS = 0

850

IDSS

Zero Gate voltage

Drain current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125°C

µA

IGSS

Gate-body leakage

Current (VDS = 0)

VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

33.75

4.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 3.35 A

1.1

1.4

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 15v, ID = 3.35 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

1870

190

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Equivalent output

capacitance

VDS =0V, VDS = 0V to 680V

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 425 V, ID = 3.35 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

tr(Voff)

Off-voltage rise time

Fall time

Cross-over time

VDD = 680 V, ID = 6.7 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 20)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 680 V, ID = 6.7 A,

VGS = 10 V

(see Figure 19)

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