BUL44 BUL44F

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Base–Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc)

(IC = 1.0 Adc, IB = 0.2 Adc)

VBE(sat)

—

—

0.85

0.92

1.1

1.25

Vdc

Collector–Emitter Saturation Voltage

(IC = 0.4 Adc, IB = 40 mAdc)

(TC = 125°C)

(IC = 1.0 Adc, IB = 0.2 Adc)

(TC = 125°C)

VCE(sat)

—

—

—

—

0.20

0.20

0.25

0.25

0.5

0.5

0.6

0.6

Vdc

DC Current Gain

(IC = 0.2 Adc, VCE = 5.0 Vdc)

(TC = 125°C)

(IC = 0.4 Adc, VCE = 1.0 Vdc)

(TC = 125°C)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

(TC = 125°C)

(IC = 10 mAdc, VCE = 5.0 Vdc)

hFE

14

—

12

12

8.0

7.0

10

—

32

20

20

14

13

22

34

—

—

—

—

—

—

—

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

—

13

—

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

COB

—

38

60

pF

Input Capacitance (VEB = 8.0 V)

CIB

—

380

600

pF

Dynamic Saturation Voltage:

Determined 1.0

µs and

3.0

µs respectively after

rising IB1 reaches 90% of

final IB1

(IC = 0.4 Adc

IB1 = 40 mAdc

VCC = 300 V)

1.0

µs

(TC = 125°C)

VCE(dsat)

—

—

2.5

2.7

—

—

Vdc

Dynamic Saturation Voltage:

Determined 1.0

µs and

3.0

µs respectively after

rising IB1 reaches 90% of

final IB1

IB1 = 40 mAdc

VCC = 300 V)

3.0

µs

(TC = 125°C)

VCE(dsat)

—

—

1.3

1.15

—

—

Vdc

3.0

µs respectively after

rising IB1 reaches 90% of

final IB1

(IC = 1.0 Adc

IB1 = 0.2 Adc

VCC = 300 V)

1.0

µs

(TC = 125°C)

VCE(dsat)

—

—

3.2

7.5

—

—

Vdc

final IB1

IB1 = 0.2 Adc

VCC = 300 V)

3.0

µs

(TC = 125°C)

—

—

1.25

1.6

—

—

SWITCHING CHARACTERISTICS: Resistive Load (D.C.

≤ 10%, Pulse Width = 20 µs)

Turn–On Time

(IC = 0.4 Adc, IB1 = 40 mAdc

IB2 = 0.2 Adc, VCC = 300 V)

(TC = 125°C)

ton

—

—

40

40

100

—

ns

Turn–Off Time

(IC = 0.4 Adc, IB1 = 40 mAdc

IB2 = 0.2 Adc, VCC = 300 V)

(TC = 125°C)

toff

—

—

1.5

2.0

2.5

—

µs

Turn–On Time

(IC = 1.0 Adc, IB1 = 0.2 Adc

IB1 = 0.5 Adc, VCC = 300 V)

(TC = 125°C)

ton

—

—

85

85

150

—

ns

Turn–Off Time

(IC = 1.0 Adc, IB1 = 0.2 Adc

IB2 = 0.5 Adc, VCC = 300 V)

(TC = 125°C)

toff

—

—

1.75

2.10

2.5

—

µs

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)

Fall Time

(IC = 0.4 Adc, IB1 = 40 mAdc

IB2 = 0.2 Adc)

(TC = 125°C)

tfi

—

—

125

120

200

—

ns

Storage Time

(TC = 125°C)

tsi

—

—

0.7

0.8

1.25

—

µs

Crossover Time

(TC = 125°C)

tc

—

—

110

110

200

—

ns

Fall Time

(IC = 1.0 Adc, IB1 = 0.2 Adc

IB2 = 0.5 Adc)

(TC = 125°C)

tfi

—

—

110

120

175

—

ns

Storage Time

(TC = 125°C)

tsi

—

—

1.7

2.25

2.75

—

µs

Crossover Time

(TC = 125°C)

tc

—

—

180

210

300

—

ns

Fall Time

(IC = 0.8 Adc, IB1 = 160 mAdc

IB2 = 160 mAdc)

(TC = 125°C)

tfi

70

—

—

180

170

—

ns

Storage Time

(TC = 125°C)

tsi

2.6

—

—

4.2

3.8

—

µs

Crossover Time

(TC = 125°C)

tc

—

—

190

350

300

—

ns