BUL44 BUL44F

3

Motorola Bipolar Power Transistor Device Data

r

2.0

IB, BASE CURRENT (mA)

0

1000

100

10

1.0

1.0

10

IC, COLLECTOR CURRENT (AMPS)

0.01

10

1.0

0.1

0.01

1.0

0.1

TYPICAL STATIC CHARACTERISTICS

100

IC, COLLECTOR CURRENT (AMPS)

1.0

10

1.0

0.1

0.01

10

1.0

10

100

1.0

10

100

1000

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMPS)

10

1.0

0.1

0.01

1.2

0.4

0.9

0.7

0.5

0.6

0.8

1.1

1.0

VCE = 1 V

TJ = 125°C

TJ = 25°C

100

IC, COLLECTOR CURRENT (AMPS)

1.0

10

1.0

0.1

0.01

10

VCE = 5 V

TJ = 125°C

TJ = 25°C

TJ = – 20°C

TJ = 25°C

IC = 0.2 A

0.4 A

1 A

1.5 A

2 A

IC/IB = 10

IC/IB = 5

TJ = 25°C

TJ = 125°C

IC/IB = 5

IC/IB = 10

Figure 1. DC Current Gain at 1 Volt

Figure 2. DC Current Gain at 5 Volts

Figure 3. Collector Saturation Region

Figure 4. Collector–Emitter Saturation Voltage

Figure 5. Base–Emitter Saturation Region

Figure 6. Capacitance

CIB

COB

TJ = 25°C

f = 1 MHz

TJ = 25°C

TJ = 125°C