SSM3K36FS datasheet(1/5 Pages) TOSHIBA

部件名	SSM3K36FS

功能描述	TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type

PDF	5 Pages

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

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SSM3K36FS

2014-03-01

1

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type

SSM3K36FS

○

High-Speed Switching Applications

• 1.5-V drive

• Low ON-resistance : Ron = 1.52 Ω (max) (@VGS = 1.5 V)

: Ron = 1.14 Ω (max) (@VGS = 1.8 V)

: Ron = 0.85 Ω (max) (@VGS = 2.5 V)

: Ron = 0.66 Ω (max) (@VGS = 4.5 V)

: Ron = 0.63 Ω (max) (@VGS = 5.0 V)

Absolute Maximum Ratings (Ta = 25 °C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDS

20

V

Gate-source voltage

VGSS

± 10

V

DC

ID

500

Drain current

Pulse

IDP

1000

mA

Drain power dissipation

PD (Note1)

150

mW

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note1: Mounted on an FR4 board

(25.4 mm

× 25.4 mm × 1.6 mm, Cu Pad: 0.36 mm

2 × 3)

Marking

Equivalent Circuit (top view)

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2H1B

Weight: 2.4 mg (typ.)

N X

1

2

3

1

2

3

Start of commercial production

2008-02

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SSM3K36FS 数据表(PDF) 1 Page - Toshiba Semiconductor

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