CMBT3905 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

–VCB0

max.

40 V

Collector–emitter voltage (open base)

–VCE0

max.

40 V

Emitter–base voltage (open collector)

–VEB0

max.

5 V

Collector current (d.c.)

–I C

max.

200 mA

Total power dissipation*

up to Tamb = 25 °C

Ptot

max.

250 mW

Storage temperature

Tstg

–55 to +150 °C

THERMAL CHARACTERISTICS

Tj = P(Rth j–t + Rth t–s + Rth s–a) + Tamb

Thermal resistance

from junction to ambient

Rth j–a

200 °C/W

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Tamb = 25 °C unless otherwise specified

Collector–emitter breakdown voltage

–IC = 1 mA; lB = 0

–V(BR)CE0 min.

40 V

Collector–base breakdown voltage

–IC = 10µA; IE = 0

–V(BR)CB0 min.

40 V

Emitter–base breakdown voltage

—IE = 10 µA; IC = 0

–V(BR)EB0 min.

5 V

Collector cut–off current

–VCE = 30 V; –VEB = 3 V

–ICEX

max.

50 nA

Base current

with reverse biased emitter junction

–IBEX

max.

50 nA

Output capacitance at f = 100 kHz

IE = 0; –VCB = 5 V

max.

4.5 pF

Input capacitance at f = 100 kHz

IC = 0; –VBE = 0,5 V

max.

10 pF

Saturation voltages

–IC = 10 mA; –IB = 1 mA

–VCEsat

max. 0,25 V

–IC = 50 mA; –IB = 5 mA

–VCEsat

max.

0,4 V

–IC = 10 mA; –IB = 1 mA

–VBEsat

min.

0,65 V

max. 0,85 V

–IC = 50 mA; –IB = 5 mA

–VBEsat

max. 0,95 V

D.C. current gain

–IC = 0,1 mA; –VCE = 1 V

hFE

min.

–IC = 1 mA; –VCE = 1 V

hFE

min.

–IC = 10 mA; –VCE = 1 V

hFE

min.

max.

150

CMBT3905

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