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CMBT3905 数据表(PDF) 1 Page - Continental Device India Limited |
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CMBT3905 数据表(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page ![]() Continental Device India Limited Data Sheet Page 1 of 3 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3905 = 2Y ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) –VCBO max. 40 V Collector–emitter voltage (open base) –VCEO max. 40 V Emitter–base voltage (open collector) –VEBO max. 5 V Collector current (d.c.) –I C max. 200 mA Total power dissipation up to Tamb = 60 °C Ptot max. 250 mW D.C. current gain –IC = 10 mA; –VCE = 1 V hFE 50 to 150 Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 20 V fT min. 200 MHz CMBT3905 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company |
类似零件编号 - CMBT3905 |
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类似说明 - CMBT3905 |
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