USBLC6-4SC6 datasheet(2/10 Pages) STMICROELECTRONICS

部件名	USBLC6-4SC6

功能描述	VERY LOW CAPACITANCE ESD PROTECTION

PDF	10 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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USBLC6-4SC6

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Table 2: Absolute Ratings

Table 3: Electrical Characteristics (Tamb = 25°C)

Symbol

Parameter

Value

Unit

VPP

Peak pulse voltage

At device level:

IEC61000-4-2 air discharge

IEC61000-4-2 contact discharge

MIL STD883C-Method 3015-6

Tstg

Storage temperature range

-55 to +150

°C

Maximum junction temperature

125

°C

Lead solder temperature (10 seconds duration)

260

°C

Symbol

Parameter

Test Conditions

Value

Unit

Min.

Typ.

Max.

VRM

Reverse stand-off voltage

IRM

Leakage current

VRM = 5V

2µA

VBR

Breakdown voltage between VBUS

and GND

IR = 1mA

Forward voltage

IR = 10mA

0.86

VCL

Clamping voltage

IPP = 1A, tp = 8/20µs

Any I/O pin to GND

IPP = 5A, tp = 8/20µs

Any I/O pin to GND

Ci/o-GND Capacitance between I/O and GND VR = 1.65V

∆Ci/o-GND

0.015

Ci/o-i/o

Capacitance between I/O

VR = 1.65V

1.85

2.7

∆Ci/o-i/o

0.04

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